器件名称: HZM6.8Z4MWA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 84.96KB 共5页
简 介:HZM6.8Z4MWA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0369-0100 Rev.1.00 Oct 01, 2004
Features
HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8Z4MWA Laser Mark N2 Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode 2. Cathode 3. Anode
Rev.1.00, Oct 01, 2004, page 1 of 4
HZM6.8Z4MWA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 2 ESD-Capability * Symbol VZ IR C rd — Min 6.47 — — — 8 Typ — — 4.0 — — Max 7.00 2 4.5 30 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
Rev.1.00, Oct 01, 2004, page 2 of 4
HZM6.8Z4MWA
Main Characteristic
10–2 250
1.0mm
0.8mm
10–3
Zener Current IZ (A)
Power Dissipation Pd (mW)
200
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
10–4
100
10–5
50
10–6
0
2
4
6
8
10
0
0
50
100
150
200
Zener Voltage VZ (V……
