器件名称: HZM6.8Z4MFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 50.57KB 共5页
简 介:HZM6.8Z4MFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0203-0100Z Rev.1.00 Mar.29.2004
Features
HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8Z4MFA Laser Mark N2 Package Code MPAK-5
Pin Arrangement
1 2
1. Cathode 2. Cathode 3. Cathode
5 4 3
4. Anode 5. Cathode
(Top View)
Rev.1.00, Mar.29.2004, page 1 of 4
HZM6.8Z4MFA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Four device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *
2
Symbol VZ IR C rd —
Min 6.47 — — — 8
Typ — — 4.0 — —
Max 7.00 2 4.5 30 —
Unit V A pF kV
Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
Rev.1.00, Mar.29.2004, page 2 of 4
HZM6.8Z4MFA
Main Characteristic
10–2 250
1.0mm
10–3
Zener Current IZ (A)
Power Dissipation Pd (mW)
200
Cu Foil
150
10–4
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
10–5
50
10–6
0
2
4
6
8
10
0
0
50
100
……
