器件名称: HZM6.8MWA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 157.83KB 共5页
简 介:HZM6.8MWA
Silicon Planar Zener Diode for Surge Absorb
REJ03G1210-0200 (Previous: ADE-208-851A) Rev.2.00 Jun 13, 2005
Features
HZM6.8MWA has two devices in a monolithic, and can absorb surge. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8MWA Laser Mark 68M Package Name MPAK Package Code (Previous Code) PLSP0003ZC-A (MPAK)
Pin Arrangement
3
2 1 (Top View)
1. Cathode 2. Cathode 3. Anode
Rev.2.00 Jun 13, 2005 page 1 of 4
HZM6.8MWA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Pd *1 Junction temperature Tj Storage temperature Tstg Note: 1. Two device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.0 2 130 30 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
Rev.2.00 Jun 13, 2005 page 2 of 4
HZM6.8MWA
Main Characteristic
10-2 10-3 10-4
Zener Current IZ (A)
10-5 10-6 10-7 10-8 10
-9
Ta=75°C Ta=25°C Ta=-25°C
10-10
0
1
2
3
4
5
6
7
8
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
250
1.0mm
Power Dissipation Pd (mW)
200
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t m……
