器件名称: HZM6.8FA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 28.32KB 共5页
简 介:HZM6.8FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-442A(Z) Rev 1 September 1996 Features
HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8FA Laser Mark 68A Package Code MPAK-5
Outline
1
2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.8FA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.0 2 130 30 — Unit V A pF kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse *2
Notes 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5V.
2
HZM6.8FA
Main Characteristic
10
-3
10-4 (A) Iz Zener Current 10
-5
10 -6 10 10
-7
-8
10 10
-9
-10 -11
10
0
1
2
3
4
5
6
7
8
Zener Voltage
Vz (V)
Fig.1 Zener current Vs. Zener voltage
250
1.0mm
200
Cu Foil
Power Dissipation P d (mW)
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
50
0 0 50 100 150 200 Ambient Temperature Ta (°C) Fig.2 Power Dissipation Vs. Ambi……
