器件名称: HZM6.2ZWA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 30.35KB 共6页
简 介:HZM6.2ZWA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-499(Z) Rev 0 Feb. 1997 Features
HZM6.2ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.2ZWA Laser Mark 62Z Package Code MPAK
Outline
3
2
1
(Top View)
1 Cathode 2 Cathode 3 Anode
HZM6.2ZWA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd —
Min 5.90 — — — 13
Typ — — 8.0 — —
Max 6.50 3 8.5 60 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR>3 A at VR = 5.5V.
2
HZM6.2ZWA
Main Characteristic
10
-2
250
1.0mm
Power Dissipation Pd (mW)
(A)
10
-3
200
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
Iz
Zener Current
10
-4
100
10
-5
50
10
-6
0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Fig.1 Zener current ……
