器件名称: HZM6.2ZMFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 164.85KB 共6页
简 介:HZM6.2ZMFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G1207-0100 (Previous: ADE-208-1515) Rev.1.00 Jun 08, 2005
Features
HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.2ZMFA Laser Mark 62N Package Name MPAK-5 Package Code (Previous Code) PLSP0005ZC-A (MPAK-5)
Pin Arrangement
1 2
5 4 3 (Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
Rev.1.00 Jun 08, 2005 page 1 of 5
HZM6.2ZMFA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Pd * Junction temperature Tj Storage temperature Tstg Note: Four device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 5.90 — — — 13 Typ — — — — — Max 6.50 3 8.5 60 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR =0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
Notes: 1. Per one device 2. Failure criterion ; IR > 3 A at VR = 5.5 V.
Rev.1.00 Jun 08, 2005 page 2 of 5
HZM6.2ZMFA
Main Characteristic
10–2 250
1.0mm
Power Dissipation Pd (mW)
10–3
Zener Current IZ (A)
200
Cu Foil
150
10–4
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
10……
