器件名称: HZM6.2Z4MWA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 85.26KB 共5页
简 介:HZM6.2Z4MWA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0368-0100 Rev.1.00 Oct 01, 2004
Features
HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.2Z4MWA Laser Mark N1 Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode 2. Cathode 3. Anode
Rev.1.00, Oct 01, 2004, page 1 of 4
HZM6.2Z4MWA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics * 1
P
P
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 2 ESD-Capability *
P P
Symbol VZ
B B
Min 5.90 — — — 8
Typ — — 4.0 — —
Max 6.50 3 4.5 60 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40 ms pulse
B B
IR C
B B
B
V R = 5.5 V V R = 0 V, f = 1 MHz
B B B B
rd —
B
I Z = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
B B
Notes: 1. Per one device. 2. Failure criterion ; I R > 3 A at V R = 5.5 V.
B B B B
Rev.1.00, Oct 01, 2004, page 2 of 4
HZM6.2Z4MWA
Main Characteristics
10–2 250
1.0mm
0.8mm
Power Dissipation Pd (mW)
10–3
Zener Current IZ (A)
200
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
10–4
100
10–5
50
10–6……
