器件名称: HZM56ZFA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 31.75KB 共6页
简 介:HZM5.6ZFA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-796 (Z) Rev 0 May. 1999 Features
HZM5.6ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5
Outline
1 2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM5.6ZFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd —
Min 5.31 — — — 8
Typ — — 8.0 — —
Max 5.92 0.5 8.5 80 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 2.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 0.5A at VR = 2.5V.
2
HZM5.6ZFA
Main Characteristic
10
-2
250
1.0mm
200
(A)
10
Power Dissipation Pd (mW)
-3
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
Zener Current
Iz
10
-4
100
10
-5
50
10
-6
0 0 2 4 6 8 10 0 50 100 150 200 Zener Voltage Vz (V) Ambient Temperature Ta ( C) Fig.2 Power Dissipation Vs. Ambient Te……
