器件名称: HZM5.6ZFA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 156.29KB 共6页
简 介:HZM5.6ZFA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
REJ03G1206-0300 (Previous: ADE-208-796B) Rev.3.00 Jun 03, 2005
Features
HZM5.6ZFA has four devices, and can absorb surge. Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HM5.6ZFA Laser Mark 56Z Package Name MPAK-5 Package Code (Previous Code) PLSP0005ZC-A (MPAK-5)
Pin Arrangement
1 2
5
4
3
(Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
Rev.3.00 Jun 03, 2005 page 1 of 5
HZM5.6ZFA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Pd * Junction temperature Tj Storage temperature Tstg Note: Four device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 5.31 — — — 8 Typ — — 8.0 — — Max 5.92 0.5 8.5 80 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 2.5 V VR =0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
Notes: 1. Per one device 2. Failure criterion ; IR > 0.5 A at VR = 2.5 V.
Rev.3.00 Jun 03, 2005 page 2 of 5
HZM5.6ZFA
Main Characteristic
10-2 250
1.0mm
10-3
Zener Current IZ (A)
Power Dissipation Pd (mW)
200
Cu Foil
150
10-4
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
10-5
……
