器件名称: HZM5.6MWA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 55.17KB 共5页
简 介:HZM5.6MWA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0212-0100Z Rev.1.00 Apr.05.2004
Features
HZM5.6MWA has Two devices in a monolithic, and can absorb surge. High ESD-Capability 30kV, human body model (IEC61000-4-2). MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM5.6MWA Laser Mark 56M Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode 2. Cathode 3. Anode
Rev.1.00, Apr.05.2004, page 1 of 4
HZM5.6MWA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * *
2 3
Symbol VZ IR C rd —
Min 5.31 — — — 30
Typ — — 110 — —
Max 5.92 5 — 80 —
Unit V A pF kV
Test Condition IZ = 5 mA, 40 ms pulse VR = 2.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 5 A at VR = 2.5 V. 3. Between cathode anode.
Rev.1.00, Apr.05.2004, page 2 of 4
HZM5.6MWA
Main Characteristic
102 250
1.0mm
103
Power Dissipation Pd (mW)
200
Cu Foil
Zener Current IZ (A)
150
104
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
105
50
106
0
2
4
6
8
10
0
0
50
100
150
0.8mm
200
Zener Voltage VZ (V) ……
