器件名称: HZM4.3FA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 32.96KB 共6页
简 介:HZM4.3FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-468(Z) Rev 0 Features
HZM4.3FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM4.3FA Laser Mark 43A Package Code MPAK-5
Outline
1
2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM4.3FA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg
*1
Value 200 150 –55 to +150
Unit mW °C °C
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *2
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*1
Symbol VZ IR C rd —
Min 4.01 — — — 30
Typ — — — — —
Max 4.48 10 150 130 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 1V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR ≥ 10 A at VR = 1V. 2. Per one device.
2
HZM4.3FA
Main Characteristic
10 1.0 (A) Iz Zener Current 10
-1
10 -2 10 10
-3
-4
10 10
-5
-6 -7
10
0
1
2
3
4
5
6
7
8
Zener Voltage
Vz (V)
Fig.1 Zener current Vs. Zener voltage
250
1.0mm
200 Power Dissipation Pd (mW)
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
50
0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
……
