器件名称: HZM27WA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 69.81KB 共6页
简 介:HZM27WA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
REJ03G1214-0400 (Previous: ADE-208-352C) Rev.4.00 Jun 16, 2005
Features
HZM27WA has two devices, and can absorb surge. MPAK Package is suitable for high density surface mounting.
Ordering Information
Type No. HZM27WA Laser Mark 27A Package Name MPAK Package Code (Previous Code) PLSP0003ZC-A (MPAK)
Pin Arrangement
3
2
1
(Top View)
1. Cathode 2. Cathode 3. Anode
Rev.4.00 Jun 16, 2005 page 1 of 5
HZM27WA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 3 ESD-Capability * Symbol VZ IR C rd — Min 25.10 — — — 30 Typ — — 2 (27) * — — Max 28.90 2 — 70 — Unit V A pF kV Test Condition IZ = 2 mA, 40 ms pulse VR = 21 V VR = 0 V, f = 1 MHz IZ = 2 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Reference only. 3. Failure criterion ; IR > 2 A at VR = 21 V
Rev.4.00 Jun 16, 2005 page 2 of 5
HZM27WA
Main Characteristic
10 250
1.0mm
Power Dissipation Pd (mW)
8
200
Cu Foil
Zener Current IZ (mA)
6
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
4
100
2
50
0 0 5 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.1 Zener Current vs. Zener Voltage
0 0 50 100 150 200 Ambient Tempera……
