器件名称: HZL6.8Z4
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 81.6KB 共5页
简 介:HZL6.2Z4
Silicon Planar Zener Diode for Surge Absorb
REJ03G0409-0100 Rev.1.00 Oct 01, 2004
Features
Low capacitance (C = 4.0 pF max) and can protect ESD of signal line. Extremely small Flat Package (EFP) is suitable for surface mount design.
Ordering Information
Type No. HZL6.2Z4 Laser Mark Y Package Code EFP
Pin Arrangement
Cathode mark Mark 1
Y
2 1. Cathode 2. Anode
Rev.1.00, Oct 01, 2004, page 1 of 4
HZL6.2Z4
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig.2. Symbol Pd * Tj Tstg Value 100 150 55 to +150 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 1 ESD-Capability * Symbol VZ IR C rd — Min 5.90 — — — 8 Typ — — — — — Max 6.50 3 4.0 60 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both Forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 3 A at VR = 5.5 V. 2. Please do not use the soldering iron due to avoid high stress to the EFP package. 3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00, Oct 01, 2004, page 2 of 4
HZL6.2Z4
Main Characteristic
10–2 250
Polyimide board 20h×15w×0.8t
10–3 Zener Current IZ (A)
Power Dissipation Pd (mW)
200
3.0
1.5
150
1.5
unit: mm
10–4
100
10–5
50
10–6
0
2
……
