器件名称: HZD6.8Z4
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 81.55KB 共5页
简 介:HZD6.8Z4
Silicon Planar Zener Diode for Surge Absorb
REJ03G0201-0200 Rev.2.00 Oct 20, 2004
Features
Low capacitance (C = 4.0 pF max) and can protect ESD of signal line. Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HZD6.8Z4 Laser Mark N2 Package Code SFP
Pin Arrangement
Cathode mark Mark 1
N2
2 1. Cathode 2. Anode
Rev.2.00, Oct 20, 2004, page 1 of 4
HZD6.8Z4
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig.2. Symbol Pd * Tj Tstg Value 150 150 55 to +150 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 1 2 ESD-Capability * * Symbol VZ IR C rd — Min 6.47 — — — 8 Typ — — — — — Max 7.00 2 4 30 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 1 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 2 A at VR = 3.5 V. 2. Between cathode and anode. 3. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.2.00, Oct 20, 2004, page 2 of 4
HZD6.8Z4
Main Characteristic
10–2 250
Polyimide board 20h×15w×0.8t
10–3 Zener Current IZ (A)
Power Dissipation Pd (mW)
200
3.0
1.5
150
1.5
unit: mm
10–4
100
10–5
50
10–6
0
2
4
6
8
10
0
0
50
100
150
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (°C) Fig.2 Power Dissipa……
