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HZC2.7

器件名称: HZC2.7
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 34.42KB    共6页
生产厂商: HITACHI
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简  介:HZC Series Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1436A (Z) Rev.1 Jan. 2002 Features These diodes are delivered taped. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HZC Series Laser Mark Let to Mark Code Package Code UFP Pin Arrangement Cathode mark Mark 1 51 2 1. Cathode 2. Anode HZC Series Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note: 1. See Fig2. Symbol Pd * Tj Tstg 1 Value 150 150 –55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Zener voltage VZ (V) * Type HZC2.0 HZC2.2 HZC2.4 HZC2.7 HZC3.0 HZC3.3 HZC3.6 HZC3.9 HZC4.3 HZC4.7 HZC5.1 HZC5.6 HZC6.2 HZC6.8 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 Min 1.90 2.10 2.30 2.50 2.80 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 1 Reverse current Test Condition Dynamic resistance Test Condition ESD-Capability * — (kV) * Min 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 2 2 IR (A) Max 120.0 120.0 120.0 120.0 50.0 20.0 10.0 10.0 10.0 10.0 5.0 5.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 Test Condition rd ( ) Max 2.20 2.40 2.60 2.90 3.20 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 Max 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5……
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HZC2.7 Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI
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