器件名称: HZB6.8MWA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 65.69KB 共5页
简 介:HZB6.8MWA
Silicon Planar Zener Diode for Surge Absorb
REJ03G1256-0200 (Previous: ADE-208-971A) Rev.2.00 Sep 13, 2005
Features
HZB6.8MWA has two devices in a monolithic, and can absorb surge. CMPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZB6.8MWA Laser Mark 68M Package Name CMPAK Package Code (Previous Code) PTSP0003ZB-A (CMPAK)
Pin Arrangement
3
2
1
(Top View)
1. Cathode 2. Cathode 3. Anode
Rev.2.00 Sep 13, 2005 page 1 of 4
HZB6.8MWA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 2 ESD-Capability * Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.0 2 130 30 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
Rev.2.00 Sep 13, 2005 page 2 of 4
HZB6.8MWA
Main Characteristic
10-2 10-3
Zener Current IZ (A)
10-4 10-5 10-6 10-7 10-8
Ta=75°C Ta=25°C Ta=-25°C
0
1
2
3
4
5
6
7
8
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 250
1.0mm
0.8mm
Power Dissipation Pd (mW)
200
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Gl……
