器件名称: J/SST201
功能描述: HIGH GAIN N-CHANNEL JFET
文件大小: 203.73KB 共2页
简 介:J/SST201 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE HIGH GAIN ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage -40V -40V 50mA 350mW -65 to +150 °C -55 to +135 °C J SERIES VGS(off) ≤ 1.5V AV = 80 V/V SST SERIES SOT-23 TOP VIEW
HIGH GAIN N-CHANNEL JFET
TO-92 BOTTOM VIEW D S G 1 2 3
S
D
1 3 2
G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage J/SST201, 202 J/SST204 J/SST201 J/SST202 J/SST204 J/SST201 J/SST202 J/SST204 MIN -40 -25 -0.3 -0.8 -0.3 0.2 0.9 0.2 -2 -2 2 J/SST201, 204 J/SST202 0.5 1 4.5 1.3 6 mS pF nV/√Hz -1.5 -4 2 1 4.5 3 -100 pA VGS = -20V, VDS = 0V VDG = 10V, ID = 0.1mA VDS = 15V, VGS = -5V VDS = 15V, VGS = 0V, f = 1kHz VDS = 15V, VGS = 0V, f = 1MHz VDS = 10V, VGS = 0V, f = 1kHz mA VDS = 15V, VGS = 0V V VDS = 15V, ID = 10nA TYP MAX UNITS CONDITIONS IG = -1A, VDS = 0V
VGS(off)
IDSS IGSS IG ID(off) gfs Ciss Crss en
Drain to Source 2 Saturation Current Gate Reverse Current Gate Operating Current Drain Cutoff Current Forward Transconductance Input Capacitance
Reverse Transfer Capacitance Noise Voltage
Linear Integrated Systems
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