器件名称: HWL23NPB
功能描述: L-Band GaAS Power FET
文件大小: 109.15KB 共7页
简 介:HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Features
Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V to 6V Operation
Outline Dimensions
1 Pin 1: Source Pin 2: Gate Pin 3: Drain
Description
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
2
3
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 1mA 150°C -65 to +150°C 0.7 Watt
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol IDSS VP gm Rth P1dB Parameters & Conditions Saturated Current at VDS=5V, VGS=0V Pinch-off Voltage at VDS=5V, ID=5.5mA Transconductance at VDS=5V, ID=55mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS °C/W dBm Min. 90 -3.5 16.5 19.5 Typ. 110 -2.0 60 200 17.5 21.0 13.0 14.0 35.0 45.0 Max. -1.5 -
G1dB
dB
PAE
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23……
