器件名称: HVV1214-100-EK
功能描述: L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200
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简 介:The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness
TM
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
Features
Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
(%)
η
IRL
(dB)
VSWR 20:1
1400
50
100
120
20
45
-8
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 200s and pulse period = 2ms.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET technology produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1214-100 Demo Kit Part Number: HVV1214-100-EK Available through Richardson Electronics (http://rfwireless.rell……
