器件名称: HVV1214-075
功能描述: L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200
文件大小: 512.83KB 共2页
简 介:L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200μs Pulse, 10% Duty TheDESCRIPTION high high power HVV1214-075 device is a is high The power HVV1214-075 device a high Ground Based Radar Applications voltage silicon enhancement mode RF transistor PACKAGE voltage silicon enhancement mode RF for transistor
designed for L-Band pulsed radar applications designed for HVV1214-075 L-Band pulsed radar applications DESCRIPTION The high power device is a high operating over over the the frequency range fromfrom operating frequency range voltage silicon enhancement mode RF transistor DESCRIPTION 1.2GHz to 1.4GHz. 1.2GHz to 1.4GHz. designed L-Band pulsed radar applications The high for power HVV1214-075 device is a high operating over the frequency range from voltage The high silicon power enhancement HVV1214-075 mode deviceRF is atransistor high voltage 1.2GHz to 1.4GHz. FEATURES designed for L-Band pulsed radar applications FEATURES silicon enhancement mode RF transistor designed for operating over the frequency range from L-Band pulsed radar applications operating over the 1.2GHz to 1.4GHz. FEATURES x High Power Gain Gain x range High Power frequency from 1.2GHz to 1.4GHz. x Excellent Ruggedness x Excellent Ruggedness x Supply Voltage FEATURES x 48V Power Gain x High 48V Supply Voltage Features x Excellent Ruggedness 48V Supply Voltage High Power Gain ABSOLUTE MAXIMUM RATINGS xx High Power Gain ABSOLUTE MAXIMUM RATINGS x Excellent Ruggedness x Excellent Ruggedness……
