器件名称: HVV1012-250-EK
功能描述: L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10
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简 介:The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness
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L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Features
Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
EFFICIENCY
(%)
IRL
(dB)
1150
50
100
250
19.5
48
20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 1ms.
DESCRIPTION
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET technology produces over 250W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http……
