器件名称: HVV1012-100
功能描述: L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10
文件大小: 844.29KB 共2页
简 介:HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed Power Transistor 1025-1150 10s Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10s Pulse, 1% Duty 1025-1150 MHz, 10s Pulse, Duty HVV1012-100 PRODUCT OVERVIEW L-Band Avionics Pulsed Power1% Transistor 1025-1150 MHz, 10s Pulse, 1% Duty
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The innovative Semiconductor Company! iThe nnovative Semiconductor Company! The innovative Semiconductor Company!
MHz to 1150 MHz. the frequency range from 1025MHz to 1150MHz. FEATURES FEATURES High Power Gain Power Excellent Features FEATURES High GainRuggedness
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ABSOLUTE MAXIMUM RATINGS V Drain-Source Voltage 105 DSS ABSOLUTE RATINGS Symbol Parameter MAXIMUM Value Unit
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ELECTRICAL CHARACTERISTICS CHARACTERISTICS ELECTRICAL ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Parameter
THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Symbol Parameter Max THERMAL CHARACTERISTICS 1 Thermal Resistance 0.14
Unit V Parameter VGSDrain-Source Gate-Source Voltage 10 V Unit V VDSS Symbol Voltage 105Value V Drain-Source Voltage 105 V A Symbol Parameter Value Unit DSS I Drain Current 8 DSX VGS Gate-Source Voltage 10 V 95 VGS Gate-Source Voltage 10 1250 V W Drain-Source Voltage DSS PD Drain Power Dissipation IDSX V Current 8 105 A IVGS Dra……
