器件名称: HVV1011-300-EK
功能描述: L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50
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简 介:The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness
TM
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50s Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
Features
Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
(%)
η
IRL
(dB)
VSWR 20:1
1400
50
100
120
20
45
-8
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50s and pulse period = 1ms.
DESCRIPTION
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1011-300 Demo Kit Part Number: HVV1011-300-EK Available through Richardson Electronics (http://rfwireless.rell.com/)
HVV……
