器件名称: HVV1011-035
功能描述: L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50
文件大小: 664.68KB 共2页
简 介:OUT Phoenix, Az. St. 85044 2008HVVi HVViSemiconductors, Semiconductors, Inc. All Rights Reserved. st Suite 100 Inc. Confidential 10235 S.S. 51 1 10235 51 St. Suite 100 HVVi Semiconductors, Inc. Confidential 2008 For HVVi Semiconductors, Inc. All Rights Reserved. 44 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. additional information, visit: www.hvvi.com Drain Efficiency P D OUT=75W,F=1200MHz,1400MHz Phoenix, Az. 85044 2008 HVVi Semiconductors, Inc. All Rights Reserved. st 1 Phoenix, Az. 85044 2008 HVVi Semiconductors, Inc. All Rights Reserved. 10235 S. 51 St. Suite 100 HVVi Semiconductors, Inc. Confidential PD Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 Phoenix, Az. 85044 2008 HVVi Semiconductors, Inc. All Rights Reserved. HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com
The high high The highpower powerHVV1214-075 HVV1011-040device device is is a a high HVV1214-075 designed for L-Band pulsed avionics applications DESCRIPTION PACKAGE voltage silicon enhancement mode RF transistor voltage silicon enhancement mode RFis transistor The high power HVV1011-040 device a high operating for over the frequency range applications from L-Band Radar Pulsed Power Transistor DESCRIPTION PACKAGE designed L-Band pulsed radar designed for L-Band pulsed avionics applications voltage silicon enhancement mode RF transistor The high power HVV1011-035 device is a high voltage 1030MHz to 1090MHz. operating over the frequency range from operating for over the frequency ……
