器件名称: IXZ12210N50L
功能描述: RF Power MOSFET
文件大小: 304.4KB 共4页
简 介:IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/s, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2 IS = 0
VDSS ID25
= =
500 V 10 A
Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 V V V V A A A mJ V/ns
125V (operating) 175MHz
>200
Per Device Total
V/ns
PDC PDHS PDAMB RthJC RthJHS
Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C
180 150
360 300 10
W W W C/W C/W max. V
Features
0.83 1.00 min.
0.42 0.50 typ.
IXYS RF Low Capacitance Z-MOSTM
Process
VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250Α VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C
500 3.5 4.83 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4
V nA A mA S °C °C °C °C g
Very low insertion inductance (<2nH)
Advantages
High Performance RF Package Easy to mount—no insulators needed Standard RF Package
(1) Thermal specifications are for the package, not per transistor
VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300S, duty cycle d ≤ 2% VDS = 50 V, ID = 0.5ID25, pulse test
1.6mm(0.063 in) from cas……
