器件名称: IXTY3N50P
功能描述: PolarHV Power MOSFET
文件大小: 236.75KB 共5页
简 介:PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 3N50P IXTP 3N50P IXTY 3N50P
RDS(on)
VDSS ID25
= 500 V = 3.6 A ≤ 2.0
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M
Maximum Ratings 500 V 500 V ±30 ±40 V V A A A mJ mJ V/ns W °C °C °C °C °C
TO-220 (IXTP)
G
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤150° C, RG = 20 TC = 25° C
3.6 8 3 10 180 10 70 -55 ... +150 150 -55 ... +150
D S
(TAB)
TO-263 (IXTA)
G
S (TAB)
TO-252 (IXTY)
G S (TAB) G = Gate S = Source D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220 TO-263 TO-252 (TO-220)
300 260
1.13/10 Nm/lb.in. 4 3 0.8 g g g
Features
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Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 50A VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 2.0 V V nA A A
l
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 s, duty cycle d ≤ 2 %
2006 IXYS All rights reserved
DS99200E(12/05)
IXTA 3N50P IXTP 3N50P IXTY 3N50P
Symbo……
