器件名称: IXTY1N80
功能描述: High Voltage MOSFET
文件大小: 60.97KB 共2页
简 介:High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
RDS(on)
= 800 V = 750 mA = 11
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C
TO-220AB (IXTP)
GD S
D (TAB)
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 TC = 25°C
5 100 3 40 -55 ... +150 150 -55 ... +150
G S D (TAB)
TO-252 AA (IXTY)
G S
D (TAB)
Mounting torque TO-220 TO-252 TO-263
1.13/10 Nm/lb.in. 4 0.8 3 300 g g g °C
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
! International standard packages ! High voltage, Low RDS (on) HDMOSTM
process ! Rugged polysilicon gate cell structure
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5 25 500 11 V V nA A A
! Fast
switching times
Applications
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
! Switch-mode
! ! DC choppers ! High frequency
Advantages
and resonant-mode power supplies Flyback inverters matching
VGS = 10 V, ID = 500 mA Pulse test,……
