器件名称: IXTY01N100
功能描述: High Voltage MOSFET N-Channel, Enhancement Mode
文件大小: 65.48KB 共2页
简 介:High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N100 IXTY 01N100
VDSS ID25
RDS(on)
= 1000 V = 100mA = 80
Symbol
Test Conditions
Maximum Ratings 01N100 1000 1000 ±20 ±30 100 400 25 -55 ... +150 150 -55 ... +150 V V
TO-251 AA
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max. TJ TC = 25°C
G
V V mA mA W °C °C °C °C g
D S
D (TAB)
TO-252 AA
G S
D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain
1.6 mm (0.063 in) from case for 5 s
300 0.8
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±50 TJ = 25°C TJ = 125°C 60 10 200 80 V V V nA A A
Features
l
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 25 A V DS = VGS, ID = 25 A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
International standard packages JEDEC TO-251 AA, TO-252 AA l Low RDS (on) HDMOSTM process
l l
Rugged polysilicon gate cell structure Fast switching times
Applications
l l l l
Level shifting Triggers Solid state relays Current regulators
V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
2001 IXYS All rights reserved
98812B (11/01)
IXTU 01N100 IXTY 01N100
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 140 60 VGS = 0 V, VDS = 25 V, f = 1 MHz 7.5 1.8 12 V GS = 10 V, VDS = 500 V, ID = ID25 RG = 50 (External) 12……
