器件名称: IXTT88N30P
功能描述: PolarHT Power MOSFET
文件大小: 593.52KB 共5页
简 介:PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 88N30P IXTT 88N30P
RDS(on)
VDSS = 300 ID25 = 88 = 40 m
V A
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M
Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C
TO-247 (IXTH)
D (TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C
88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268
300
1.13/10 Nm/lb.in. 6 10 5 g g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 40 V V nA A A m
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99129A(01/04)
2004 IXYS All rights reserved
IXTH……
