器件名称: IXTT82N25P
功能描述: PolarHT Power MOSFET
文件大小: 610.02KB 共5页
简 介:PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTQ 82N25P IXTT 82N25P IXTK 82N25P
RDS(on)
VDSS ID25
= 250 V = 82 A = 35 m
TO-264 (IXTK) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 TO-268 TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Maximum Ratings 250 250 ± 20 82 75 250 60 40 1.0 10 500 -55 ... +150 150 -55 ... +150 300 V V V A A A A mJ J V/ns W °C °C °C °C
G = Gate S = Source D = Drain TAB = Drain
G
D
S
(TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
1.13/10 Nm/lb.in. 5.5 10 5.0 g g g
Features
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 25 250 35 V V nA A A m
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99121B……
