器件名称: IXTT6N120
功能描述: High Voltage Power MOSFET
文件大小: 590.73KB 共4页
简 介:High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6N120 IXTT 6N120
VDSS ID25
RDS(on)
= 1200 V = 6A = 2.6
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 6 24 6 25 500 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C g g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G G = Gate S = Source S D = Drain TAB = Drain
(TAB)
Features
z z z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
300 6 4
1.13/10 Nm/lb.in.
z
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 ±100 25 500 2.6 V V nA A A
Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
2004 IXYS All rights reserved
DS99024B(01/04)
IXTH 6……
