器件名称: IXTT69N30P
功能描述: PolarHT Power MOSFET
文件大小: 107.23KB 共5页
简 介:PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 69N30P IXTT 69N30P
VDSS ID25
RDS(on)
= 300 V = 69 A = 49 m
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Transient
Maximum Ratings 300 300 ± 20 ± 30 V V V V A A A mJ J V/ns W °C °C °C °C
TO-3P (IXTQ)
G D S
(TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C
69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S D = Drain TAB = Drain
D (TAB)
G = Gate S = Source
Features
! !
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
1.13/10 Nm/lb.in. 5.5 5.0 g g
!
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 49 V V nA A A m
! ! !
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99078A(04/04)
204 IXYS All rights reserved
IXTQ 69N30P IXTT 69N30P
Symbol Test Conditions ……
