器件名称: IXTT1N100
功能描述: High Voltage MOSFET
文件大小: 87.69KB 共2页
简 介:Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTH 1N100 IXTT 1N100
VDSS ID25
RDS(on)
= 1000 V = 1.5 A = 11
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 1000 1000 ± 20 ± 30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 TC = 25°C
6 200 3 60 -55 ... +150 150 -55 ... +150
G S
(TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Mounting torque (TO-247) TO-268 TO-247
1.13/10 Nm/lb.in. 4 6 300 g g °C
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard packages High voltage, Low RDS (on) HDMOSTM
process Rugged polysilicon gate cell structure
Fast
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 500 11 V V nA A A
switching times
Applications
Switch-mode
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
DC choppers High frequency
Advantages
and resonant-mode power supplies Flyback inverters matching
VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
Space savings ……