器件名称: IXTT100N25P
功能描述: PolarHT Power MOSFET N-Channel Enhancement Mode
文件大小: 613.87KB 共5页
简 介:Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 100N25P IXTK 100N25P IXTT 100N25P
VDSS = 250 V ID25 = 100 A RDS(on) = 27 m
TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 TO-268 TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C 600 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Maximum Ratings 250 250 ± 20 100 75 250 60 60 2.0 10 V V V A A A A mJ J V/ns
G S
G
D
S
D = Drain, TAB = Drain
(TAB)
G = Gate, S = Source,
TO-268 (IXTT)
D (TAB)
TO-264(SP) (IXTK)
G
D
S
D (TAB) D = Drain TAB = Drain
1.13/10 Nm/lb.in. 5.5 10 5 g g g
G = Gate S = Source
Features
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 25 250 27 V V nA A A m
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize pr……
