器件名称: IXTR200N10P
功能描述: PolarTM HiPerFET Power MOSFET
文件大小: 114.58KB 共5页
简 介:Advanced Technical Information
PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
VDSS ID25
RDS(on)
= 100 V = 133 A = 8 m
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M
Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g
z z
ISOPLUS 247TM E153432
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C
133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150
G = Gate S = Source
D = Drain
Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z z
Avalanche voltage rated Fast recovery intrinsic diode
Applications z DC-DC converters
z
50/60 Hz, RMS, 1 minute Mounting Force
2500 20..120/4.6..20 5
Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A TJ = 150°C TJ = 175°C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 250 1000 8.0 5.……
