器件名称: IXTQ62N15P
功能描述: PolarHT Power MOSFET
文件大小: 251KB 共5页
简 介:PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
VDSS ID25
RDS(on)
= 150 V = 62 A ≤ 40 m
TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤150° C, RG = 10 TC = 25° C Maximum Ratings 150 150 ±20 ±30 62 150 50 30 1.0 10 350 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C
G D S D = Drain TAB = Drain (TAB) G D S (TAB) G S (TAB)
TO-220 (IXTP)
TO-3P (IXTQ)
300 °C 2600 °C 1.13/10 Nm/lb.in. 5.5 4 3 g g g
G = Gate S = Source
Features
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Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C
Characteristic Values Min. Typ. Max. 150 3.0 5.5 ±100 25 250 33 40 V V nA A A m
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 s, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
2006 IXYS All rights reserved
DS99154E(12/05)
IXTA 62N15P……
