器件名称: IXTQ36N50P
功能描述: N-Channel Enhancement Mode
文件大小: 142.06KB 共5页
简 介:Advanced Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 36N50P IXTT 36N50P
VDSS ID25
RDS(on)
= 500 V = 36 A ≤ 170 mΩ
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 500 500 ± 20 ± 30 V V V V A A A mJ J V/ns
TO-3P (IXTQ)
G D S D (TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
36 100 36 50 1.5 10 500 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
W °C °C °C °C °C
G = Gate S = Source D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque TO-3P TO-268 (TO-3P)
300 250
Features
z z
1.13/10 Nm/lb.in. 5.5 5.0 g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. Advantages 500 2.5 5.0 ±100 25 250 170 V
z
V nA μA μA mΩ
z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
2004 IXYS All rights reserved
DS99228(11/04)
IXTQ 36N50P IXTT 36N50P
Symbol Test Conditions Characteristic Values (TJ = 25……
