器件名称: IXTQ140N10P
功能描述: PolarHT
文件大小: 170.2KB 共5页
简 介:PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 140N10P IXTT 140N10P
VDSS ID25
RDS(on)
= = ≤
100 V 140 A 11 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤150° C, RG = 4 TC = 25° C
Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.5 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C
G = Gate S = Source G S D = Drain TAB = Drain D (TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300 260
Features
l l
1.13/10 Nm/lb.in. 5.5 5.0 g g
l
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA A A m m
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤300 s, duty cycle d ≤ 2 %
2006 IXYS All rights reserved
DS99133E(……
