器件名称: IXTP75N10P
功能描述: N-Channel Enhancement Mode
文件大小: 581.24KB 共5页
简 介:Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 75N10P IXTA 75N10P IXTP 75N10P
VDSS ID25
RDS(on)
= 100 V = 75 A = 25 m
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M
Maximum Ratings 100 100 ± 20 V V V A A A mJ J V/ns W °C °C °C °C °C
G = Gate S = Source G S (TAB) D = Drain TAB = Drain G D S (TAB) G D (TAB)
S
TO-220 (IXTP)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 TC = 25°C
75 200 50 30 1.0 10 300 -55 ... +150 150 -55 ... +150
TO-263 (IXTA)
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220)
300 260
Md Weight
1.13/10 Nm/lb.in. 5.5 4 3 g g g
Features
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 21 25 V
Advantages
z
V nA A A m
z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize proprietary……
