器件名称: IXTP5N50P
功能描述: PolarHV Power MOSFET - N-Channel Enhancement Mode
文件大小: 102.63KB 共5页
简 介:Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P IXTP 5N50P IXTY 5N50P
VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 20 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 4.8 10 5 20 250 10 89 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C
TO-263 (IXTA)
G
S (TAB)
TO-220 (IXTP)
G
D S
(TAB)
TO-252 (IXTY)
G S (TAB)
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 TO-252 (TO-220)
300 260
Md Weight
1.13/10 Nm/lb.in. 4 3 0.8 g g g
G = Gate S = Source D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 50μA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±100 5 50 1.4 V V nA μA μA Ω
Features
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
2005 IXYS All rights ……
