器件名称: IXTP3N110
功能描述: High Voltage Power MOSFETs
文件大小: 102.19KB 共4页
简 介:High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(on) 4.5 4.0
IXTA/IXTP 3N120 IXTA/IXTP 3N110
1200 V 1100 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 TC = 25°C 3N120 3N110 3N120 3N110
Maximum Ratings 1200 1100 1200 1100 ±20 ±30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V
D (TAB)
TO-220 (IXTP)
V V A A A mJ mJ V/ns W °C °C °C °C Features
l l l
G
DS
TO-263 (IXTA)
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263
300
1.13/10 Nm/lb.in. 4 2 g g
l
International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3N120 3N110 1200 1100 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 3N120 3N110 25 1 4.5 4.0 V V V nA A mA
Advantages
l l l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Easy to mount Space savings High power density
2001 IXYS All rights reserved
……
