器件名称: IXTP1R6N50P
功能描述: PolarHV Power MOSFET
文件大小: 119.52KB 共4页
简 介:Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTP 1R6N50P IXTY 1R6N50P
VDSS ID25
RDS(on)
= 500 = 1.6 ≤ 6.5
V A
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 TC = 25°C
Maximum Ratings TO-252 (IXTY) 500 500 ± 30 ± 40 1.6 2.5 1.6 5 75 10 43 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns
G G S (TAB) TAB
TO-220 (IXTP)
W °C °C °C °C °C
D S
(TAB) D = Drain TAB = Drain
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10s Maximum tab temperature for soldering TO-252 package for 10s Mounting torque (TO-220) TO-252 TO-220
300 260
Features
z
Md Weight
1.13/10 Nm/lb.in. 0.8 4 g g
z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 6.5 V V nA A A
Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
2005 IXYS All rights reserved
DS99441(09/05)
IXTP 1R6N50P IXTY 1R……
