器件名称: IXTP180N055T
功能描述: Trench Gate Power MOSFET
文件大小: 117.16KB 共5页
简 介:Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55 V = 180 A = 4.0 m
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M
Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150 A A A A
G (TAB) G D S (TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 TC = 25°C
J V/ns W °C °C °C °C °C
G = Gate S = Source
D S
TO-263 (IXTA)
G
S (TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220)
300 260
Md Weight
1.13/10 Nm/lb.in. 5.5 4 3 g g g
Features
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 1 250 3.3 4.0 V
Advantages
z
V nA A A m
z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
2005 IXYS All rights res……
