器件名称: IXTP10N60PM
功能描述: PolarHV Power MOSFET
文件大小: 53.27KB 共2页
简 介:Preliminary Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
IXTP 10N60PM
VDSS ID25
RDS(on)
= 600 V = 5 A ≤ 740 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 600 600 ±30 ±40 5 30 10 20 500 10 50 -55 ... +150 150 -55 ... +150 V V V V
OVERMOLDED TO-220 (IXTP...M) OUTLINE
G A A A mJ mJ V/ns W °C °C °C °C °C
Isolated Tab DS
G = Gate S = Source
D = Drain
Features
z
z
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
300 260
z
z
1.13/10 Nm/lb.in. 4 g
Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 5 50 V V nA μA μA
z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 5 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
740 m Ω
2006 IXYS All rights reserved
DS99450E(04/06)
IXTP ……
