器件名称: IXTP05N100
功能描述: High Voltage MOSFET
文件大小: 541.14KB 共4页
简 介:High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 05N100 VDSS IXTP 05N100 I D25
RDS(on)
= 1000 V = 750 mA = 17
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings TO-220AB (IXTP) 1000 1000 ± 30 ± 40 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C Features g °C
G = Gate, S = Source, D = Drain, TAB = Drain G S D (TAB) GD S D (TAB)
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS TJ ≤ 150°C, RG = 47 TC = 25°C
5 100 3 40 -55 ... +150 150 -55 ... +150
Mounting torque
1.13/10 Nm/lb.in. 4 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
y International standard packages y High voltage, Low RDS (on) HDMOSTM y Fast
switching times
process y Rugged polysilicon gate cell structure Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 ±100 V V nA A A
Symbol
Test Conditions
Applications
y Switch-mode
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
y y DC choppers y High frequency
Advantages
and resonant-mode power supplies Flyback inverters matching
25 500 15 17
VGS = 10 V, ID = 375 mA Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
y Space savings y High power density
DS98736B(10/04)
20……
