器件名称: IXTN61N50
功能描述: High Current Power MOSFET
文件大小: 53.34KB 共2页
简 介:High Current Power MOSFET
N-Channel Enhancement Mode
VDSS IXTN 58N50 IXTN 61N50 500 V 500 V
ID25
RDS(on)
58 A 85 m 61 A 75 m
Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 M Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 ... +150 150 -40 ... +150 IXTN IXTN IXTN IXTN 58N50 61N50 58N50 61N50 Maximum Ratings 500 500 ±20 ±30 58 61 232 244 625 °C °C °C 2500 3000 V~ V~ Features International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (<100 pF) - reduced RFI Low package inductance (< 10 nH) - easy to drive and to protect Aluminium Nitride Isolation - increased current ratings Applications DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies V V
G S
miniBLOC, SOT-227 B E153432
V V A A A A W
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 500 1.7 4.0 ±200 500 2 58N50 61N50 85 75 V V nA A mA m m
V DSS VGS(th) I GSS I DSS RDS(on)
V GS = 0 V, ID = 5 mA V ……
