器件名称: IXTN30N100L
功能描述: Power MOSFETs with Extended FBSOA
文件大小: 97.81KB 共5页
简 介:Power MOSFETs with IXTB 30N100L IXTN 30N100L Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V ID25 = 30 A RDS(on) ≤ 0.45 Ω
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR E AS PD TJ TJM Tstg TL VISOL Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings IXTB IXTN 1000 1000 ± 30 ± 40 30 70 30 80 2.0 800 1000 1000 ± 30 ± 40 30 70 30 80 2.0 800 150 -55 ... +150 V V V V A A A mJ J W °C °C °C °C V~ V~
PLUS264 (IXTB)
G D S
(TAB)
miniBLOC, SOT-227 B (IXTN) E153432
S D G
-55 ... +150
G S S D S
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL < 1 mA t = 1 min t=1s
300 -
2500 3000
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque Mounting force PLUS264 SOT-227B
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 30 N/lb. g g
28..150 /6.4..30
Features Designed for linear operation International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Applications Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls Advantages Easy to mount Space savings High power density
Symbol
Test Conditions (TJ = 25°C unless otherwise specified) VGS = 0 V, ID = 1 mA V……
