器件名称: IXTN21N100
功能描述: High Voltage MegaMOSTMFETs
文件大小: 137.16KB 共4页
简 介:High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXTK IXTN 1000 1000 ±20 ±30 21 84 500 1000 1000 ±20 ±30 21 84 520 150 -55 ... +150 2500 3000 V V V V A A W °C °C °C °C V~ V~
S S D G S G D S
D (TAB)
miniBLOC, SOT-227 B E153432
D G
S
-55 ... +150
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features
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International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±200 TJ = 25°C TJ = 125°C 500 2 0.55 V V nA A mA
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VDSS VGH(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 6 mA VDS = VGS, ID = 500 A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
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DC-DC converters Synchronous r……
