器件名称: IXTM50N20
功能描述: MegaMOS FET
文件大小: 111.4KB 共4页
简 介:MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 m
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C
Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D G = Gate, S = Source,
G
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features
l l l l
l
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.045 V V nA A mA
Applications
l
VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
l l l
Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
l l
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
IXYS reserves the right ……
