器件名称: IXTM12N50A
功能描述: Standard Power MOSFET
文件大小: 97.86KB 共4页
简 介:Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH 12 N50A IXTM 12 N50A 500 V 500 V
ID25 12 A 12 A
RDS(on) 0.4 0.4
Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
Maximum Ratings 500 500 ±20 ±30 12 48 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
D G = Gate, S = Source,
G
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features
q q q q
q
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.40 V V nA A mA
Applications
q
VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250 A V DS = VGS, ID = 250 A VGS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 V
q q q
Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
q
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
q q
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power dens……